FDD13AN06A0
Manufacturer:
On Semiconductor
Mfr.Part #:
FDD13AN06A0
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 115 W 60 V Continuous Drain Current (ID):50 A 29 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 60 V |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 2.39 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 9.9 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 115 W |
| Power Dissipation | 115 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.35 nF |
| Continuous Drain Current (ID) | 50 A |
| Rds On Max | 13.5 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 26 ns |
| Element Configuration | Single |
| Fall Time | 25 ns |
| Rise Time | 77 ns |
| Dual Supply Voltage | 60 V |
| Gate Charge | 29 nC |
| Drain to Source Resistance | 11.5 mΩ |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 3248
Distributors
pcbx
pcbxUnit Price$1.58956
Ext.Price$1.58956
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.58956 | $1.58956 |
| 10 | $1.02425 | $10.24250 |
| 25 | $0.90273 | $22.56825 |
| 50 | $0.79562 | $39.78100 |
| 100 | $0.70122 | $70.12200 |
| 300 | $0.62829 | $188.48700 |
| 500 | $0.56295 | $281.47500 |
| 1000 | $0.55927 | $559.27000 |